Detailled characterisation of SOI n-FinFETs at very low temperature.
Autor: | Achour, H., Cretu, B., Routoure, J.-M., Carin, R., Talmat, R., Benfdila, A., Simoen, E., Claeys, C. |
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Zdroj: | 2013 14th International Conference on Ultimate Integration on Silicon (ULIS); 2013, p125-128, 4p |
Databáze: | Complementary Index |
Externí odkaz: |