Detailled characterisation of SOI n-FinFETs at very low temperature.

Autor: Achour, H., Cretu, B., Routoure, J.-M., Carin, R., Talmat, R., Benfdila, A., Simoen, E., Claeys, C.
Zdroj: 2013 14th International Conference on Ultimate Integration on Silicon (ULIS); 2013, p125-128, 4p
Databáze: Complementary Index