Self-aligned double patterning of 1× nm FinFETs; A new device integration through the challenging geometry.
| Autor: | Kim, M.-S., Vandeweyer, T., Altamirano-Sanchez, E., Dekkers, H., Van Besien, E., Tsvetanova, D., Richard, O., Chew, S., Boccardi, G., Horiguchi, N. |
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| Zdroj: | 2013 14th International Conference on Ultimate Integration on Silicon (ULIS); 2013, p101-104, 4p |
| Databáze: | Complementary Index |
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