| Autor: |
SALIM, EVAN T., AL WAZNY, MARWA S., FAKHRY, MAKRAM A. |
| Předmět: |
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| Zdroj: |
Modern Physics Letters B; 6/30/2013, Vol. 27 Issue 16, p1-7, 7p, 1 Black and White Photograph, 1 Diagram, 4 Graphs |
| Abstrakt: |
Thin films of micro bismuth oxide particles were successfully prepared by in situ oxi-dation of the laser ablated bismuth metal. (Ill) oriented p-type crystalline silicon sub-strates were used. The effects of substrate tiled angle on the characteristics of the pre-pared film were studied. Also, the performance of n-Bi203/Si heterojunction device was investigated. The obtained current-voltage characteristics in dark and under illu-mination insure the dependence of the fabricated device characteristic on the deposition angle. The I-V characteristics show that all prepared devices are of abrupt type. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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