| Autor: |
Abbott, Paul, Rohr, Carsten, Connolly, James P., Ballard, Ian, Barnham, Keith W. J., Ginige, Ravin, Clarke, Graham, Nasi, Lucia, Mazzer, Massimo |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2003, Vol. 653 Issue 1, p213, 9p |
| Abstrakt: |
Thermophotovoltaic (TPV) generators can reduce pollution by lowering their operating temperature, but the choice of semiconductor materials for this purpose is limited. We present results on an InGaAs p-n ceil lattice-matched to InP which is optimised for the Erbia emission spectrum peak at a wavelength of 1.5μm. However, for lower temperature TPV applications at longer wavelengths one is constrained by the lack of lattice-matched materials. In order to extend the absorption towards 1900 nm for a selective emitter based on Thulium straincompensated InGaAs/InGaAs quantum well cells (QWCs) on InP have been designed and characterised. We present data showing that strain-compensated QWCs extend the spectral response (SR) to longer wavelengths and can show a lower dark current density than the bulk InGaAs p-n cell despite the QWC having a lower band-gap. We have developed a model for the SR of strained multi-quantum well (MQW) systems in InGaAsP, including quantum effects as well as strain-induced changes. SR modelling of strain-compensated structures is compared with experimental data, and efficiencies, for a Thulia spectrum, are predicted. Our study also shows that back surface reflection must be taken into account in these devices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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