| Autor: |
Ginige, Ravin, Kelleher, Carmel, Corbett, Brian, Hilgarth, Just, Clarke, Graham |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2003, Vol. 653 Issue 1, p354, 9p |
| Abstrakt: |
We report on the design, fabrication and evaluation of InGaAs/InP TPV cells. The fabrication process was developed for single wafer laboratory processing of lattice matched In[sub 0.53]Ga[sub 0.47]As cells and subsequently adapted for batch processing in industry. The 1 × lcm cells and 1 mm diameter mesa structures were evaluated using Dark IV and the PVIV techniques. Of the batch (volume) processed 1 x 1 cm cells, the best measured efficiency under AM0 conditions (Si standard) was 10.9% (batch efficiency was 10.4%), with a short circuit current density (I[sub SC]) of 54.6 2 u u mA/cm², open-circuit voltage (V[sub OC]) of 363 mV and a fill factor (FF) of 74%. Using an IR lamp, a current density of 1442.8 mA/cm², open-circuit voltage of 418.5 mV and a fill factor of 65.7% were recorded. We also point out the salient design and fabrication features employedin realising the above quoted results, which we believe, are the first reported results from an industrial volume production. Problems associated with volume production are also discussed with solutions. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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