| Autor: |
Takenaga, T., Yoshida, C., Yamazaki, Y., Hatada, A., Nakabayashi, M., Iba, Y., Takahashi, A., Noshiro, H., Tsunoda, K., Aoki, M., Furukawa, T., Ohji, H., Sugii, T. |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Magnetics; Jul2013, Vol. 49 Issue 7, p3878-3881, 4p |
| Abstrakt: |
We applied Co20Fe60B20 layers with thicknesses from 1.2 to 1.5 nm to the sensing layers of MgO based magnetic tunnel junctions (MTJs) with spin-valve-type structures annealed at 350^\circC for magnetic field sensors. The CoFeB layer on MgO had in-plane magnetic anisotropy and also slight perpendicular magnetic anisotropy that originated at the MgO/CoFeB interface. MR characteristics of high reversibility and linearity were confirmed at a CoFeB thickness of 1.3 nm. We consider that the hysteresis-free properties of the sensing layer were obtained by the balance between in-plane magnetization and other components in magnetization including out-of-plane magnetization. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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