| Autor: |
Yang-Yu Fan, Nieh, Renee E., Lee, Jack C., Lucovsky, Gerry, Brown, George A., Register, Leonard Frank, Banerjee, Sanjay K. |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices; Nov2002, Vol. 49 Issue 11, p1969, 10p, 1 Diagram, 1 Chart, 9 Graphs |
| Abstrakt: |
Reports on the development of a tunneling model to understand the gate current as a function of voltage and temperature, based on the energy-dispersion relation in each region of the gate-dielectric-silicon system. Calculation of the gate capacitance from Schrodinger and Poisson equations subject to Fermi-Dirac statistics. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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