| Autor: |
Fuh, Chur-Shyang, Liu, Po-Tsun, Teng, Li-Feng, Fan, Yang-Shun, Chang, Chih-Hsiang, Wu, Yu-Ta, Huang, Sih-Wei, Shieh, Han-Ping D. |
| Předmět: |
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| Zdroj: |
SID Symposium Digest of Technical Papers; Jun2013, Vol. 44 Issue 1, p1026-1028, 3p |
| Abstrakt: |
Microwave annealing was used instead of furnace annealing to post-treat a nitridated amorphous InGaZnO thin film transistor (a-IGZO:N TFT), and obviously improved its electrical performance and reliability. This performance of a-IGZO:N TFT with microwave annealing process of 300s is well competitive with its counterpart with furnace annealing at 350°C for 1 hr. Owing to its low thermal budget and selective heating to materials of interest, microwave annealing is highly promising for flexible oxide TFTs application. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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