P.19: Density-of-States Based Device-Circuit Co-Design Platform for Solution-Processed Organic Integrated Circuits.

Autor:	Jang, Jaeman, Kim, Jaehyeong, Lee, Jaewook, Jo, Chunhyung, Jun, Sungwoo, Kim, Hyeongjung, Choi, Sunwoong, Kim, Dong Myong, Lee, Jiyoul, Koo, Bonwon, Chung, Jong Won, Kim, Dae Hwan
Předmět:	DENSITY of states INTEGRATED circuits VERILOG (Computer hardware description language) THIN film transistors ELECTRONIC circuits
Zdroj:	SID Symposium Digest of Technical Papers; Jun2013, Vol. 44 Issue 1, p1051-1054, 4p
Abstrakt:	In this work, we propose the subgap density-of-states (DOS) based device-circuit co-design platform for solution-processed organic integrated circuits. For the circuit simulation, analytical I-V and C-V model were established from experimentally extracted DOS parameters, incorporated into HSPICE via Verilog-A, and verified by comparing the simulation result with the measured characteristics of inverter integrated with solution-processed polymer-based organic thin-film-transistors. Furthermore, as the case study, it was shown by using our well-calibrated simulation platform that the pass-transistor type logic was potentially promising in low-power and high-speed solution processed organic integrated circuits. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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