| Autor: |
Tajima, Michio, Tanaka, Koji, Forster, Maxime, Toyota, Hiroyuki, Ogura, Atsushi |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Jun2013, Vol. 113 Issue 24, p243701, 5p, 1 Chart, 6 Graphs |
| Abstrakt: |
The electrical activity of Ga impurities in a high concentration range in B and P highly compensated Si co-doped with Ga for photovoltaic applications has been investigated through the analysis of donor-acceptor pair luminescence. We have identified the fine structure due to the pair luminescence between P-donors and Ga-acceptors based on a comparison with a theoretical spectrum using their generally accepted ionization energies in low concentration ranges in uncompensated Si. The fine structure showed no dependence on dopant concentrations in the P and Ga concentration ranges from 7 × 1016 to 4 × 1017 cm-3 and from 5 × 1016 to 3 × 1017 cm-3, respectively, which leads us to suggest that both P and Ga impurities act as isolated donors and acceptors without noticeable reduction of ionization energies due to high doping. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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