| Autor: |
Tsai, Tsung-Ming, Chang, Kuan-Chang, Zhang, Rui, Chang, Ting-Chang, Lou, J. C., Chen, Jung-Hui, Young, Tai-Fa, Tseng, Bae-Heng, Shih, Chih-Cheng, Pan, Yin-Chih, Chen, Min-Chen, Pan, Jhih-Hong, Syu, Yong-En, Sze, Simon M. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 6/24/2013, Vol. 102 Issue 25, p253509, 4p, 1 Diagram, 4 Graphs |
| Abstrakt: |
A bilayer resistive switching memory device with an inserted porous silicon oxide layer is investigated in this letter. Compared with single Zr:SiOx layer structure, Zr:SiOx/porous SiOx structure outperforms from various aspects, including low operating voltages, tighter distributions of set voltage, higher stability of both low resistance state and high resistance state, and satisfactory endurance characteristics. Electric field simulation by comsolTM Multiphysics is applied, which corroborates that intensive electric field around the pore in porous SiOx layer guides the conduction of electrons. The constraint of conduction path leads to better stabilization and prominent performance of bilayer resistive switching devices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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