| Autor: |
Fleetwood, D. M., Xiong, H. D., Nicklaw, C. J., Felix, J. A., Schrimpf, R. D., Pantelides, S. T. |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Nuclear Science; Dec2002 Part 1 of 2, Vol. 49 Issue 6, p2674, 10p, 1 Black and White Photograph, 2 Diagrams, 5 Graphs |
| Abstrakt: |
Presents a study that analyzed density-functional theory calculations suggesting the 1/f noise of metal-oxide-silicon devices is caused by the capture and emissions of electrons at oxygen vacancy defects near the Si-SiO[sub2] interface. Investigation of charge exchange with oxygen vacancies in SiO[sub2]; Analysis of defect microstructures and energetics; Examination of hydrogen-related defects. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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