| Autor: |
Witczak, Steven C., King, Everett E., Saks, Nelson S., Lacoe, Ronald C., Shaneyfelt, Marty R., Hash, Gerald L., Hjalmarson, Harold P., Mayer, Donald C. |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Nuclear Science; Dec2002 Part 1 of 2, Vol. 49 Issue 6, p2662, 5p, 1 Diagram, 5 Graphs |
| Abstrakt: |
Presents a study that examined the geometric component of charge pumping current in n-channel metal-oxide-silicon field effect transistors. Investigation of irradiation and electrical characterization; Analysis of oxide-trapped charge dependence; Assessment of the substrate hot-electron injection. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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