| Autor: |
Liu, Han-Yin, Lee, Ching-Sung, Hsu, Wei-Chou, Tseng, Lung-Yi, Chou, Bo-Yi, Ho, Chiu-Sheng, Wu, Chang-Luen |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices; Jul2013, Vol. 60 Issue 7, p2231-2237, 7p |
| Abstrakt: |
Al0.3\rm Ga0.7\rm N/\rm AlN/\rm GaN metal-oxide-semiconductor high electron mobility transistors (HEMTs) grown on Si substrates by using ozone water oxidation method are investigated. Superior improvements of 52.2% in two-terminal gate-drain breakdown voltage (BVGD), 30.3% in drain-source current density (IDS) at VGS=0~V~(\rm IDSS0), 43.6% in maximum IDS~(IDS,\max), 34.7% in maximum extrinsic transconductance (gm,\max), and 52.7%/34.3% in unity-gain cutoff/maximum oscillation frequency (fT/f\max) are achieved as compared with a reference Schottky-gated HEMT. Thermal stability is studied by conducting temperature-dependent characterizations of devices at ambient temperatures of 300–550 K. Time-dependent electrical reliability analyses for the devices stressed in off-state (VGS=-20~V and VDS=0~V) for 0–60 h and on-state (VGS=2~V and VDS=20~V) for 0–20 h are also made to physically investigate the dominant degradation mechanisms. Excellent reliability and thermal stability at 300–550 K are achieved by the present design. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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