Ultralow DC Power VCO Based on InP-HEMT and Heterojunction Interband Tunnel Diode for Wireless Applications.

Autor: Cidronali, Alessandro, Collodi, Giovanni, Camprini, Matteo, Nair, Vijay, Manes, Gianfranco, Lewis, J., Goronkin, Herb
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Zdroj: IEEE Transactions on Microwave Theory & Techniques; Dec2002, Vol. 50 Issue 12, p2938, 9p, 7 Black and White Photographs, 5 Diagrams, 1 Chart, 12 Graphs
Abstrakt: Presents ultralow direct current power voltage-controlled oscillators based on InP-high electron-mobility transistor and heterojunction interband tunnel diode for wireless applications. Indication of the monolithic integration of tunneling diodes with other semiconductor devices; Output power generated by the circuits; Determination of phase noise characteristics.
Databáze: Complementary Index