| Autor: |
Scholz, R., Gösele, U., Niemann, E., Wischmeyer, F. |
| Předmět: |
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| Zdroj: |
Applied Physics A: Materials Science & Processing; 1997, Vol. 64 Issue 2, p115, 11p |
| Abstrakt: |
The microstructure of β-SiC/Si(100) interfaces generated by carbonization and subsequent growth in a chemical vapor deposition (CVD) reactor was investigated by transmission electron microscopy (TEM). Differently prepared cross section and planar specimens allowed a detailed characterization of interface defects. Besides pyramidal voids, which were frequently reported to appear at SiC/Si interfaces within the substrate, recently discovered micropipes are of special interest. Both kinds of defects form by outdiffusion of silicon during the carbonization process. In contrast to voids. which initially remain empty, micropipes develop by simultaneous ingrowth of SiC. The area densities of micropipes were found to be orders of magnitude higher than those of voids. Micropipe formation may be due to a high density of SiC nuclei preexisting on the substrate surfaces after pretreatments. The simultaneous development of voids and micropipes is discussed on the basis of results obtained from a short-time carbonization experiment. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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