Experimental study of the defect accumulation in the microwave bipolar transistors under the action of an electric-pulse train.

Autor:	Sasunkevich, A., Sorokin, L., Usychenko, V.
Předmět:	MICROWAVE bipolar transistors SEMICONDUCTOR devices RADIOS DIODES MICROWAVES
Zdroj:	Journal of Communications Technology & Electronics; Jun2013, Vol. 58 Issue 6, p578-583, 6p
Abstrakt:	It is demonstrated that a number of relatively thin electric pulses that cause the catastrophic failure of a transistor due to the accumulation of defects exponentially increases with decreasing pulse energy when the pulse energy is less than the burnout energy by a factor of no less than two. A stronger alternative destruction effect is implemented if the energy is comparable with the burnout energy. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu Full text from SpringerLink