| Autor: |
Casallas-Moreno, Y. L., Pérez-Caro, M., Gallardo-Hernández, S., Ramírez-López, M., Martínez-Velis, I., Escobosa-Echavarría, A., López-López, M. |
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| Zdroj: |
Journal of Applied Physics; Jun2013, Vol. 113 Issue 21, p214308, 5p, 4 Color Photographs, 2 Diagrams, 2 Graphs |
| Abstrakt: |
InN epitaxial films with cubic phase were grown by rf-plasma-assisted molecular beam epitaxy (RF-MBE) on GaAs(001) substrates employing two methods: migration-enhanced epitaxy (MEE) and conventional MBE technique. The films were synthesized at different growth temperatures ranging from 490 to 550 °C, and different In beam fluxes (BEPIn) ranging from 5.9 × 10-7 to 9.7 × 10-7 Torr. We found the optimum conditions for the nucleation of the cubic phase of the InN using a buffer composed of several thin layers, according to reflection high-energy electron diffraction (RHEED) patterns. Crystallographic analysis by high resolution X-ray diffraction (HR-XRD) and RHEED confirmed the growth of c-InN by the two methods. We achieved with the MEE method a higher crystal quality and higher cubic phase purity. The ratio of cubic to hexagonal components in InN films was estimated from the ratio of the integrated X-ray diffraction intensities of the cubic (002) and hexagonal ([formula]) planes measured by X-ray reciprocal space mapping (RSM). For MEE samples, the cubic phase of InN increases employing higher In beam fluxes and higher growth temperatures. We have obtained a cubic purity phase of 96.4% for a film grown at 510 °C by MEE. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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