| Autor: |
Naumova, O.V., Antonova, I.V., Popov, V.P., Stas', V.F. |
| Předmět: |
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| Zdroj: |
Semiconductors; Jan2003, Vol. 37 Issue 1, p92, 5p |
| Abstrakt: |
Hydrogenated silicon (Si:H) layers and Si:H/p-Si heterostructures were produced by multipleenergy (3-24 keV) high-dose (5 × 10[sup 16]-3 × 10[sup 17] cm[sup -2]) hydrogen implantation into p-Si wafers. After implantation, current transport across the structures is controlled by the Poole-Frenkel mechanism, with the energy of the dominating emission center equal to E[sub c] - 0.89 eV. The maximum photosensitivity is observed for structures implanted with 3.2 × 10[sup 17] cm[sup -2] of hydrogen and annealed in the temperature range of 250-300°C. The band gap of the Si:H layer E[sub g] ≈ 2.4 eV, and the dielectric constant ε ≈ 3.2. The density of states near the Fermi level is (1-2) × 10[sup 17] cm[sup -3] eV[sup -1]. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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