| Autor: |
Lindroos, J., Fenning, D. P., Backlund, D. J., Verlage, E., Gorgulla, A., Estreicher, S. K., Savin, H., Buonassisi, T. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; May2013, Vol. 113 Issue 20, p204906, 7p |
| Abstrakt: |
Nickel is increasingly used in both IC and photovoltaic device fabrication, yet it has the potential to create highly recombination-active precipitates in silicon. For nearly three decades, the accepted nickel diffusivity in silicon has been DNi(T)=2.3×10-3exp(-0.47 eV/kBT) cm2/s, a surprisingly low value given reports of rapid nickel diffusion in industrial applications. In this paper, we employ modern experimental methods to measure the higher nickel diffusivity DNi(T)=(1.69±0.74)×10-4exp(-0.15±0.04 eV/kBT) cm2/s. The measured activation energy is close to that predicted by first-principles theory using the nudged-elastic-band method. Our measured diffusivity of nickel is higher than previously published values at temperatures below 1150 °C, and orders of magnitude higher when extrapolated to room temperature. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
