| Autor: |
Gogova, D., Petrov, P. P., Buegler, M., Wagner, M. R., Nenstiel, C., Callsen, G., Schmidbauer, M., Kucharski, R., Zajac, M., Dwilinski, R., Phillips, M. R., Hoffmann, A., Fornari, R. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; May2013, Vol. 113 Issue 20, p203513, 6p, 3 Charts, 3 Graphs |
| Abstrakt: |
We studied the structural and optical properties of state-of-the-art non-polar bulk GaN grown by the ammonothermal method. The investigated samples have an extremely low dislocation density (DD) of less than 5 × 104 cm-2, which results in very narrow high-resolution x-ray rocking curves. The a and c lattice parameters of these stress-free GaN samples were precisely determined by using an x-ray diffraction technique based on the modified Bond method. The obtained values are compared to the lattice parameters of free-standing GaN from different methods and sources. The observed differences are discussed in terms of free-electron concentrations, point defects, and DD. Micro Raman spectroscopy revealed a very narrow phonon linewidth and negligible built-in strain in accordance with the high-resolution x-ray diffraction data. The optical transitions were investigated by cathodoluminescence measurements. The analysis of the experimental data clearly demonstrates the excellent crystalline perfection of ammonothermal GaN material and its potential for fabrication of non-polar substrates for homoepitaxial growth of GaN based device structures. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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