| Autor: |
Lu, C. J., Bendersky, L. A., Chang, K., Takeuchi, I. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 1/1/2003, Vol. 93 Issue 1, p512, 10p, 12 Black and White Photographs |
| Abstrakt: |
The defect structure of a 350-nm-thick epitaxial Ba[sub 0.3]Sr[sub 0.7]TiO[sub 3] (BSTO) film grown on (001) LaAlO[sub 3] has been investigated using conventional and high-resolution transmission electron microscopy. The dominant defects in the film are edge-type threading dislocations (TDs) with Burgers vectors b = 〈100〉 and 〈110〉. Pure-screw TDs and partial TDs of mixed character were also observed. A rapid reduction of defect density occurred after the growth of the first 100 nm BSTO adjacent to the interface. In the top layer of the film, all TDs with b=〈100〉 are perfect while those with b=〈110〉 are usually dissociated into two partials with a small separation (a few nanometers). However, in the near-interface layer of the film, many TDs with b=〈100〉 are split into two or three partials. A high density of extended stacking faults with displacement vectors of ½〈110〉 type were observed. The stacking faults are associated with dissociated dislocations and partial half loops. The mechanisms for the generation, dissociation and evolution of the TDs are discussed. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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