| Autor: |
Hwan Jung, Hyung, Ho Kim, Dong, Su Kim, Chang, Bae, Tae-Sung, Bum Chung, Kwun, Yoon Ryu, Seung |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 5/6/2013, Vol. 102 Issue 18, p183902, 5p, 1 Diagram, 1 Chart, 3 Graphs |
| Abstrakt: |
We employed poly(styrenesulfonate)-doped poly (3,4-ethylenedioxythiophene) (PEDOT:PSS) as a p-layer on textured fluorine-tin-oxide (FTO) glass in pin-type hydrogenated amorphous silicon solar cells (a-Si:H SCs). An amorphous tungsten oxide (WO3) layer and gold nanoparticles (Au-NPs) 10 nm in size were included to prevent the degradation and to increase short-circuit current by the Plasmon effect, respectively, between the PEDOT:PSS and intrinsic-Si layer. The energy band between PEDOT:PSS and WO3 was meaningfully adjusted by Au-NPs. The p-type PEDOT:PSS layer in these organic-inorganic hybrid a-Si:H SCs results in an increased conversion efficiency from ∼2.42% to ∼5.49% and an increased open-circuit voltage from ∼0.29 V to ∼0.56 V. PEDOT:PSS on textured FTO glass is sufficiently showing that it can replace the p-type Si layer in pin-type a-Si:H SCs. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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