| Autor: |
Gvozdić, Dejan M., Nenadović, Nebojša M., Schlachetzki, Andreas |
| Předmět: |
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| Zdroj: |
IEEE Journal of Quantum Electronics; Dec2002, Vol. 38 Issue 12, p1565, 15p, 3 Diagrams, 2 Charts, 15 Graphs |
| Abstrakt: |
This paper presents material-gain and threshold-current calculation of a InGaAs-InP quantum-wire laser in the framework of the k · p method, with included conduction-band nonparabolicity for the first time. The method for band-structure calculation is based on conformal mapping and Fourier expansion. The calculation shows that high material gain (7000 cm[sup -1]) can be achieved at room temperature for polarization along the free axis of the quantum wire. We propose an optimized laser structure, based on a stack of quantum wires. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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