A 64Mb SRAM in 22nm SOI technology featuring fine-granularity power gating and low-energy power-supply-partition techniques for 37% leakage reduction.
| Autor: | Pilo, Harold, Adams, Chad A., Arsovski, Igor, Houle, Robert M., Lamphier, Steven M., Lee, Michael M., Pavlik, Frank M., Sambatur, Sushma N., Seferagic, Adnan, Wu, Richard, Younus, Mohammad I. |
|---|---|
| Zdroj: | 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers; 2013, p322-323, 2p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|