Microstructure of GaN epitaxial films grown on (0001) sapphire by chemical beam epitaxy as related to buffer growth conditions.
| Autor: | Degave, F, Ruterana, P, Nouet, G |
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| Zdroj: | Journal of Physics: Condensed Matter; 12/11/2000, Vol. 12 Issue 49, p10307-10312, 6p |
| Databáze: | Complementary Index |
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