Theoretical study of strain-induced step configuration changes on vicinal Si(001) by the growth of Ge.

Autor: Man-Hong, Zhang, Li-Wei, Guo, Qi, Huang, Jun-Ming, Zhou
Zdroj: Journal of Physics: Condensed Matter; 1/ 6/1997, Vol. 9 Issue 1, p53-58, 6p
Databáze: Complementary Index