Theoretical study of strain-induced step configuration changes on vicinal Si(001) by the growth of Ge.
Autor: | Man-Hong, Zhang, Li-Wei, Guo, Qi, Huang, Jun-Ming, Zhou |
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Zdroj: | Journal of Physics: Condensed Matter; 1/ 6/1997, Vol. 9 Issue 1, p53-58, 6p |
Databáze: | Complementary Index |
Externí odkaz: |