Critical behaviour of thermopower and conductivity at the metal-insulator transition in high-mobility Si-MOSFETs.
| Autor: | Fletcher, R, Pudalov, V M, Radcliffe, A D B, Possanzini, C |
|---|---|
| Zdroj: | Semiconductor Science & Technology; 2001, Vol. 16 Issue 5, p386-393, 8p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|