High efficiency (1.2 mW/mA) top-surface-emitting GaAs quantum well lasers.
| Autor: | Lee, Y.H., Tell, B., Brown-Goebeler, K., Jewell, J.L., Leibenguth, R.E., Asom, M.T., Livescu, G., Luther, L., Mattera, V.D. |
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| Zdroj: | Electronics Letters (Institution of Engineering & Technology); 08/02/1990, Vol. 26 Issue 16, p1308-1310, 3p |
| Databáze: | Complementary Index |
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