C-V and Capacitance Transient Analysis of Self-Implanted Amorphous Si Layers Regrown by Swept-Line Electron Beam (Sled) Annealing.
| Autor: | Soda, K. J., Dejule, R. Y., Streetman, B. G. |
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| Zdroj: | MRS Online Proceedings Library; 01/01/1980, Vol. 1, pN.PAG-1, 1p |
| Databáze: | Complementary Index |
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