Investigations of an Antimony Doped Poly-Silicon Gate Structure for P-Type JFET Applications.
| Autor: | SÖDERBÄrg, Anders, Grelsson, Ö., Magnusson, U. |
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| Zdroj: | MRS Online Proceedings Library; 01/03/1990, Vol. 182, pN.PAG-1, 1p |
| Databáze: | Complementary Index |
| Externí odkaz: |
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