Characteristics of Doping and Diffusion of Heavily Doped N and P type InP and InGaAs Epitaxial Layers grown by Metal Organic Chemical Vapor Deposition.

Autor:	Pinzone, C.J., Ha, N. T., Gerrard, N. D., Dupuis, R. D., Luftman, H. S.
Zdroj:	MRS Online Proceedings Library; 01/25/1989, Vol. 163, pN.PAG-1, 1p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu Full text from SpringerLink