Schottky Diode Characteristics of CVD—Grown β —SiC Epitaxial Films on (n11) Silicon Substrates ( n= 1,3,4,5,6 ).

Autor: Fujii, Yoshihisa, Ogura, Atsuko, Furukawa, Katsuki, Shigeta, Mitsuhiro, Suzuki, Akira, Nakajima, Shigeo
Zdroj: MRS Online Proceedings Library; 01/17/1988, Vol. 116, pN.PAG-1, 1p
Databáze: Complementary Index
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