Lanthanide Refractory Semiconductors Based on the Th3P4 Structure.
Autor: | Gschneidner, K. A., Nakahara, J. F., Beaudry, B. J., Takeshita, T., Laboratory, Ames |
---|---|
Zdroj: | MRS Online Proceedings Library; 01/07/1987, Vol. 97, pN.PAG-1, 1p |
Databáze: | Complementary Index |
Externí odkaz: |