Lanthanide Refractory Semiconductors Based on the Th3P4 Structure.

Autor: Gschneidner, K. A., Nakahara, J. F., Beaudry, B. J., Takeshita, T., Laboratory, Ames
Zdroj: MRS Online Proceedings Library; 01/07/1987, Vol. 97, pN.PAG-1, 1p
Databáze: Complementary Index