Rutherford Backscattering (RBS) and Channeling Studies of Defects in Arsenic Implanted Silicon Induced by Arsenic Clustering.

Autor: Baiocchi, Frank A., Kamgar, Avid
Zdroj: MRS Online Proceedings Library; 01/16/1986, Vol. 82, pN.PAG-1, 1p
Databáze: Complementary Index