Preparation of Oriented GaAs Bicrystal Layers by Vapor-Phase Epitaxy Using Lateral Overgrowth.

Autor: Salerno, Jack P., Mcclelland, R. W., Vohl, P., Fan, John C. C., Macropoulos, W., Bozler, C. O., Witt, A. F.
Zdroj: MRS Online Proceedings Library; 01/02/1981, Vol. 5, pN.PAG-1, 1p
Databáze: Complementary Index