AlGaN/GaN HEMTs on resistive Si(111) substrate grown by gas-source MBE.

Autor: Cordier, Y., Semond, F., Massies, J., Dessertene, B., Cassette, S., Surrugue, M., Adam, D., Delage, S.L.
Zdroj: Electronics Letters (Institution of Engineering & Technology); 01/17/2002, Vol. 38 Issue 2, p91-92, 2p
Databáze: Complementary Index