High speed non-selfaligned InP/InGaAs Npn heterojunction bipolar transistor grown by low pressure metal organic vapour phase epitaxy.
| Autor: | Enquist, P.M., Slater, D.B., Sekula-Moise, P.A., Vernon, S.M., Haven, V.E., Gagnon, E.D., Morris, A.S., Trew, R.J., Hutchby, J.A. |
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| Zdroj: | Electronics Letters (Institution of Engineering & Technology); 04/23/1992, Vol. 28 Issue 9, p832-833, 2p |
| Databáze: | Complementary Index |
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