15 Gbit/s integrated laser diodedriver using 0.3 μm gate lengthquantum well transistors.

Autor: Wang, Z.-G., Berroth, M., Nowotny, U., Gotzeina, W., Hofmann, P., Hülsmann, A., Kaufel, G., Köhler, K., Raynor, B., Schneider, J.
Zdroj: Electronics Letters (Institution of Engineering & Technology); 01/30/1992, Vol. 28 Issue 3, p222-224, 3p
Databáze: Complementary Index