Low pressure chemical vapor deposition of silicon nitride using the environmentally friendly tris(dimethylamino)silane precursor.
| Autor: | Levy, R. A., Lin, X., Grow, J. M., Boeglin, H. J., Shalvoy, R. |
|---|---|
| Zdroj: | Journal of Materials Research; 06/01/1996, Vol. 11 Issue 6, p1483-1488, 6p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|
Full text from SpringerLink