| Autor: |
Higo, Akio, Li, Ling-Han, Higurashi, Eiji, Sugiyama, Masakazu, Nakano, Yoshiaki |
| Zdroj: |
International Conference on Optical Internet (COIN2012); 1/ 1/2012, p24-25, 2p |
| Abstrakt: |
InGaAsP/InP active layer on silicon heterointegration by Ar/O2 plasma assisted direct bonding in air was reported. The efficient current injection from SOI micro rib to InGaAsP active layer has been achieved to realized a direct-current-pumped Fabry-Perot Laser by pulse operation at 43 mA threshold current. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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