| Autor: |
Pyo, Suk-Soo, Kim, Jun-Sung, Kim, Jung-Han, Jung, Hyun-Taek, Song, Tae-Joong, Lee, Cheol-Ha, Kim, Gyu-Hong, Lee, Young-Keun, Kim, Kee-Sup |
| Zdroj: |
Proceedings of the IEEE 2012 Custom Integrated Circuits Conference; 1/ 1/2012, p1-4, 4p |
| Abstrakt: |
In this paper, an embedded SDRAM (eSDRAM) with smart boosting and power management (SB-PM) scheme for low power operation has been designed. SB-PM scheme decreases 40.3% of dynamic power and 69.1% of standby power consumption with ECC compared with the conventional scheme. A 266-Mb eSDRAM with SB-PM scheme is designed in a 45-nm CMOS technology showing 51.2-mW dynamic power and 2.05mW standby power consumption at VDD=0.65V and 85˚C. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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