| Autor: |
Lourts Deepak, A., Dhulipalla, Likhitha, Chaitra, S.K., Basha Shaik, Chand |
| Zdroj: |
IEEE-International Conference On Advances In Engineering, Science & Management (ICAESM -2012); 1/ 1/2012, p222-227, 6p |
| Abstrakt: |
In future, as the size of channel length decrease, the necessity of low power based circuit will be increased. In nanometer regime, CMOS based circuits may not be used due to problem in its fundamental material, short channel effect and high leakage. To achieve low power device in nanometer region can be obtained by utilizing alternative technologies devices like FinFET. In most of the electronic circuits, clocks are playing a critical role to operate the device with the help of oscillatory circuit and cause the more power dissipation. In this paper, we designed the 32nm technology 5-stage and 3-stage ring oscillator to generate high frequencies like 40GHz and 60 GHz respectively with ultra low power by means of Double Gate FET which is known as FinFET and result obtained as 39 GHz and 59 GHz respectively. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
