ESD induced leakage current increase of diffused diodes.

Autor: Cambieri, Juri, Reinprecht, Wolfgang, Roger, Frederic, Wagner, Andreas, Minixhofer, Rainer
Zdroj: Electrical Overstress / Electrostatic Discharge Symposium Proceedings 2012; 1/ 1/2012, p1-6, 6p
Abstrakt: For high performance analog circuits, stringent requirements on leakage current and stray capacitance impose challenging constraints to protection circuits. An analysis of the contact region impact on the leakage performance of ESD-IO diodes is presented. The current limit of these elements given by the onset of leakage degradation is explained and its dependence on stress duration is analyzed. [ABSTRACT FROM PUBLISHER]
Databáze: Complementary Index