| Autor: |
Bormann, Dirk, Kaehlert, Stefan, Liao, Lei, Wei, Muh-Dey, Werth, Tobias D., Wunderlich, Ralf, Heinen, Stefan |
| Zdroj: |
Asia-Pacific Microwave Conference 2011; 1/ 1/2011, p498-501, 4p |
| Abstrakt: |
A notch filter LNA for multiband multistandard cellular communication is presented. The circuit is capable of serving multiple FDD bands of the LTE standard and its cobanded WCDMA/UMTS counterparts. Due to its architecture also TDD bands, including GSM bands DCS1900, PCS1800 and the LTE TDD, can be covered. This is achieved without an additional off-chip interstage filter and LNA. The circuit has been fabricated on a commercial 90 nm technology and works from 1.4 V supply voltage. In FDD mode it draws less than 16 mA and in TDD mode less than 7 mA, respectively. For LTE band 2 (TX: 1850 – 1910 MHz, 80 MHz duplex distance) a noise figure of 3.6 dB is not exceeded at 20.4 dB gain. The 1-dB-desensitization point is −21 dBm, IIP3DPX = −12.3 dBm, and IIP3HDPX = −5.2 dBm while the filter attenuates a 3 MHz TX signal by 14.3 dB. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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