| Autor: |
Kaatuzian, Hassan, Javadi, Elham, Khatami, Saeid |
| Zdroj: |
2012 Symposium on Photonics & Optoelectronics; 1/ 1/2012, p1-4, 4p |
| Abstrakt: |
-In this paper the influence of structural parameters variations on the current gain and high frequency performance of a AlGaAs/GaAs HBT are investigated. Analytical equations are used to predict conventional microwave-photonic device structure for performance improvement. Through scaling of the length and width of the emitter and the thickness of the base, cutoff frequency and maximum oscillation frequency are improved from 26GHz to 29GHz and form 45GHz to 76GHz respectively. Also the DC current gain increases from 362 up to 579. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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