| Autor: |
Chang, Sheng-Yuan, Chen, Yu-Chung, Wei, An Chyi, Lee, Hong-Ji, Lian, Nan-Tzu, Yang, Tahone, Chen, Kuang-Chao, Lu, Chih-Yuan |
| Zdroj: |
2012 SEMI Advanced Semiconductor Manufacturing Conference; 1/ 1/2012, p151-154, 4p |
| Abstrakt: |
The authors investigated the correlation between variation of post-etch critical dimension (ECD) and etcher chamber condition during floating gate etching process. This paper presents the significantly effective method of utilizing the SF6/O2-based very long plasma-chamber cleaning or the novel Transformer coupled plasma (TCP) window temperature design not only achieves a stable gate CD (CD variation < 2nm) but also simplifies etching process. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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