| Autor: |
Hubert, Q., Jahan, C., Toffoli, A., Navarro, G., Chandrashekar, S., Noe, P., Sousa, V., Perniola, L., Nodin, J.-F., Persico, A., Maitrejean, S., Roule, A., Henaff, E., Tessaire, M., Zuliani, P., Annunziata, R., Reimbold, G., Pananakakis, G., De Salvo, B. |
| Zdroj: |
2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC); 1/ 1/2012, p286-289, 4p |
| Abstrakt: |
In this paper, carbon-doped Ge2Sb2Te5, integrating from 5% to 15% of carbon content, is studied as an alternative phase-change material. Accurate electrical characterizations were performed both on large and shrinked PCM devices. Compared to pure Ge2Sb2Te5 based reference devices, a wide decrease of about 50% of the RESET current, which translates into a RESET power reduction of about 25%, is observed when 5% of carbon is added to Ge2Sb2Te5. Moreover, an improved endurance up to 108 cycles is obtained while maintaining a programming window higher than 2 orders of magnitude. An increase of about 30% of the activation energy for the crystallization process is also observed. Therefore, this paper suggests that Ge2Sb2Te5 doped with 5% of carbon is a promising phase-change material for future PCM technology. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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