| Autor: |
Semra, L., Telia, A., Kaddeche, M., Soltani, A. |
| Zdroj: |
2012 International Conference on Engineering & Technology (ICET); 1/ 1/2012, p1-4, 4p |
| Abstrakt: |
In this work AlxIn1−xN/GaN heterostructure is considered taking into account the effects of spontaneous and piezoelectric polarizations on sheet carrier concentration versus alloy composition. It is found that piezoelectric polarization decreases from (14.8×10−6 C/cm2) to (−5.25×l0−6 C/cm2). Lattice matching appears for alloy composition between x = 0.81 and x = 0.82 when the piezoelectric polarization vanishes. The induced polarization varies from (−14×l0−6 C/cm2) to (10.85×l0−6 C/cm2). The calculated sheet carrier concentration is 6.3×l012, 1.73, 2.88 and 4.08×l013cm−2 for alloy compositions x = 0.75, 0.80, 0.85 and 0.90 respectively. Also barrier thickness on sheet carrier concentration is studied. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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