| Autor: |
Zainal, Norzaini, Zaini, Siti Nurul Waheeda Mohmad, Yusof, Mohd Nuru Ehsan, Alias, Ezzah Azimah, Radzali, Rosfariza, Hassan, Zainuriah |
| Zdroj: |
2012 International Conference on Enabling Science & Nanotechnology; 1/ 1/2012, p1-2, 2p |
| Abstrakt: |
The technology of GaN (gallium nitride) has been demonstrated at great speed as it allows devices base on it to operate at high temperature, power and frequency. Nevertheless, the main issue of nitride growth nowadays is the choice of substrate that can promote the production of nitride devices at low cost level. Recently, many group researches propose that silicon (Si) would be a potential substrate for the nitride, as it offers cheaper production as well as provides good thermal conductivity, easier fabrication process and permits good uniformity of carrier injection to the devices. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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